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SSM3K16FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FV
0.220.05
High Speed Switching Applications Analog Switch Applications
* * Suitable for high-density mounting due to compact package Low on-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 15 (max) (@VGS = 1.5 V)
1.20.05 0.80.05
nit: mm
1.20.05 0.80.05 0.320.05 3 2 0.130.05
: Ron = 4.0 (max) (@VGS = 2.5 V)
0.4
1
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 10 100 200 150 150 -55~150 Unit V V mA mW C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature
0.50.05
0.4
VESM
1.Gate 2.Source 3.Drain
Note:
Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1L1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.0015 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t)
0.5mm 0.45mm 0.45mm 0.4mm
Marking
3
Equivalent Circuit
3
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3K16FV
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V Drain-Source on-resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ID = 1 mA, VGS = 1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min 20 0.6 40 Typ. 1.5 2.2 5.2 9.3 4.5 9.8 70 125 Max 1 1 1.1 3.0 4.0 15 pF pF pF ns Unit A V A V mS
Switching Time Test Circuit
(a) Test circuit
2.5 V 0 10 s VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C OUT IN 50 RL VDD 0V 10%
(b) VIN
2.5 V 90%
(c) VOUT
VDD
10% 90% tr ton toff tf
VDS (ON)
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration when using the device.
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ID - VDS
250 2.5 200 43 10 2.3 2.1 1.9 150 Common source Ta = 25C 100 Ta = 100C 10 25C 1 1000 Common source VDS = 3 V
ID - VGS
(mA)
Drain current ID
Drain current
ID
(mA)
100
1.7
-25C
50
1.5 VGS = 1.3 V
0.1
0 0
0.5
1
1.5
2
0.01 0
1
2
3
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) - ID
12 Common source Ta = 25C 10 5 6
RDS (ON) - VGS
Common source ID = 10 mA
Drain-Source on resistance RDS (ON) ()
8 VGS = 1.5 V
Drain-Source on resistance RDS (ON) ()
4
6
3 Ta = 100C 25C 1 -25C
4 2.5 V 2 4V 0 1 10 100 1000
2
0 0
2
4
6
8
10
Drain current ID (mA)
Gate-Source voltage
VGS (V)
RDS (ON) - Ta
8 Common source 2 Common source ID = 0.1 mA VDS = 3 V
Vth - Ta
Vth (V) Gate threshold voltage
125 150 4 V, 10 mA 100
Drain-Source on resistance RDS (ON) ()
1.6
6
VGS = 1.5 V, ID = 1 mA
1.2
4 2.5 V, 10 mA 2
0.8
0.4
0 -25
0
25
50
75
0 -25
0
25
50
75
100
125
150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
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SSM3K16FV
Yfs - ID
500 300 Common source VDS = 3 V Ta = 25C 100 50 30 250 Common source VGS = 0 V Ta = 25C D 150 G S 100
IDR - VDS
Drain reverse current IDR (mA)
Forward transfer admittance Yfs (mS)
200
IDR
10 5 3
50
1 1
10
100
1000
0 0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
Drain current
ID
(mA)
Drain-Source voltage
VDS
(V)
C - VDS
100 50 30 5000 3000 toff
t - ID
Common source VDD = 3 V VGS = 0~2.5 V Ta = 25C
10
Switching time t (ns)
(pF)
1000 500 300 tf
Capacitance C
5 3 Common source 1 VGS = 0 V f = 1 MHz 0.5 Ta = 25C 0.3 0.1 0.3 0.5 1 3 5 10
Ciss Coss Crss
100 ton 50 30 tr
30 50
100
Drain-Source voltage
VDS (V)
10 0.1
1
10
100
Drain current ID (mA)
PD - Ta
250
Drain power dissipation PD (mW)
200
150
100
50
0 0
20
40
60
80
100
120
140
160
Ambient temperature Ta (C)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01

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